source ion造句
例句与造句
- Implantation homogeneity study on type - 100 mevva source ion implantor
源注入机注入均匀性研究 - Study of nd silicides synthesis by mevva source ion implantation
源离子注入合成钕硅化物的研究 - Effect of the auxiliary electrode radius in a vacant circular pipe on ion dose in plasma source ion implantation
附加电极半径对空心圆管端点附近离子注入剂量的影响 - Diamond - like carbon gradient film on ti6a14v alloy substrate have been prepared by means of plasma source ion implanted - ion beam enhanced deposition ( psii - ibed ) . for potential applications as artificial joint materials and artificial cardiac valve materials , its trobological performance and hemocompatibility has also been evaluated in the present ph . d . thesis
本研究采用等离子源离子注入?离子束增强沉积技术( psii - ibed )制备了钛合金基类金刚石梯度薄膜材料，对类金刚石梯度薄膜这一新型人工关节材料和人工心脏瓣膜材料的生物摩擦学性能和血液相容性进行了研究和评价，研究了摩擦磨损对材料血液相容性的影响。 - The results were summarized as follows : ( 1 ) diamond - like carbon films could be fabricated by plasma source ion implantation ; it was found that different parameters such as the negative voltage , frequency , gas flux influenced sp3 bond ratio of dlcs , the paper described the effect in details and showed that diamond - like carbon films with increasing negative voltage , reducing frequency , appropriate gas flux got high proportion of sp3 bond ; dlcs prepared by psii contained a good deal of sic , the composition affected its properties ( such as the films hardness ) ; psii method could offer good adhesion to dlcs , but it caused the surface morphology to become asperity
研究结果表明： ( 1 )用全方位离子注入技术能够制备出类金刚石膜。在全方位离子注入技术中，不同的偏压、频率、气体流量都对薄膜中sp ~ 3键比例有所影响，文中对具体的影响进行了分析，发现偏压增加、频率降低和适中的气体流量可以制备出含sp ~ 3键较多的类金刚石膜；同时发现用全方位离子注入技术制备的类金刚石膜含有大量的sic成份，这对薄膜的性能(例如硬度)影响很大；用全方位离子注入制备的薄膜其结合力得到增强，但薄膜的表面形貌差。 - It's difficult to find source ion in a sentence. 用source ion造句挺难的
- This paper has discussed preparing diamond - like carbon films by means of micro - wave ecr plasma source ion implantation and plasma enhanced chemical vapour deposition . we use the raman spectrum , ft - ir , afm and so on to study the dlc film . the result indicates : different bias voltage , frequency and gas flow rate of psii will have impact on sp3 proportion of dlc films , we find high bias voltage , low frequency and moderate gas flow rate can prepare high sp3 proportion dlc films ; we simply illustrate the influence of bias voltage on sp3 proportion of dlc films in pecvd
研究结果表明：在全方位离子注入技术中，不同的偏压、频率、气体流量都对薄膜中sp ~ 3键比例有所影响，文中对具体的影响进行了分析，发现偏压的增加、频率的降低和适中的气体流量可以制备出sp ~ 3键比例高的类金刚石膜；在等离子增强化学气相沉积技术中，对偏压对sp ~ 3键比例的影响也进行了简单分析。 - ( ii ) charging effects on temporal and spatial evolution of dusty plasma sheath in plasma source ion implantation . the temporal and spatial evolution of a dusty plasma sheath in plasma source ion implantation has been investigated with a fluid theory and a self - consistent dust - charging model . a negative potential pulse is introduced to form the plasma sheath
( )尘埃粒子的充电效应对等离子体源离子注入( ps )鞘层时空演化的影响采用流体模型及自洽的尘埃粒子充电模型，我们研究了等离子体源离子注入时的尘埃等离子体鞘层的时空演化。